SCT1000N170 SiC MOSFET TO-247 10-30 Pcs | HC2M1000170D
SCT1000N170 / HC2M1000170D Silicon Carbide MOSFET – TO-247-3 / TO-247-3L
Upgrade your power electronics projects with this high-performance Silicon Carbide (SiC) N-Channel MOSFET in the standard TO-247-3 / TO-247-3L package. The SCT1000N170 (HC2M1000170D) is designed for demanding switching applications where efficiency, thermal stability, and high-voltage handling are essential. Available in convenient multi-packs of 10 to 30 pieces, this listing is ideal for engineers, hobbyists, and professionals stocking up for power supply design, inverter builds, motor drives, and more.
Key Features
- Model: SCT1000N170 / HC2M1000170D
- Package: TO-247-3 / TO-247-3L (industry-standard footprint)
- Type: Silicon Carbide (SiC) N-Channel Field Effect Transistor (MOSFET)
- General Purpose Use: Suitable for a wide range of high-voltage switching and power conversion applications
- International Standard Compliant: Meets international contact load, protection, and voltage standards
- Customizable Quantity: Choose from 10 to 30 pieces to match your project needs
- No High-Concern Chemicals: Confirmed free of flagged hazardous substances
- Made in Mainland China
Why Silicon Carbide MOSFETs?
SiC MOSFETs offer significant advantages over traditional silicon counterparts — including lower switching losses, higher breakdown voltage tolerance, superior thermal conductivity, and faster switching speeds. This makes the SCT1000N170 an excellent choice for:
- High-efficiency power supplies and converters
- Solar inverters and energy storage systems
- Industrial motor drives
- EV (Electric Vehicle) charging infrastructure
- Switching power amplifiers and DC-DC converters
Package Contents
- 10–30 × SCT1000N170 / HC2M1000170D SiC MOSFET (TO-247-3 / TO-247-3L)
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Frequently Asked Questions
Q: What is the difference between the TO-247-3 and TO-247-3L packages for the SCT1000N170?
A: The TO-247-3 is the standard 3-lead through-hole package widely used in power electronics. The TO-247-3L (also called the "long lead" variant) features an extended drain lead, which helps reduce parasitic inductance in fast-switching circuits — improving efficiency in high-frequency power designs. Both are compatible with standard TO-247 PCB footprints.
Q: What applications are the SCT1000N170 / HC2M1000170D SiC MOSFETs best suited for?
A: These Silicon Carbide MOSFETs are ideal for high-voltage, high-frequency switching applications such as solar inverters, EV charging systems, industrial motor drives, DC-DC converters, and switch-mode power supplies (SMPS). Their SiC construction enables lower conduction and switching losses compared to conventional silicon MOSFETs.
Q: Why should I buy in a multi-pack of 10-30 pieces?
A: Purchasing in bulk ensures you have spares on hand for prototyping, testing, and production runs — reducing downtime and per-unit cost. The 10-30 piece flexible quantity option lets you scale your order to match your exact project requirements without overstocking.